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| ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES * Extremely low equivalent on-resistance; RSAT = 32mV at 5A * 4.3 amps continuous current * Up to 15 amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 amps SOT89 APPLICATIONS * Emergency lighting circuits * Motor driving (including DC fans) * Solenoid, relay and actuator drivers * DC-DC modules * Backlight inverters * Power switches * MOSFET gate drivers PINOUT ORDERING INFORMATION DEVICE ZX5T951ZTA REEL SIZE 7" TAPE WIDTH 12mm embossed QUANTITY PER REEL 1000 units DEVICE MARKING * 951 ISSUE 2 - DECEMBER 2004 1 TOP VIEW SEMICONDUCTORS ZX5T951Z ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT -100 -60 -7 -4.3 -15 1.5 12 2.1 16.8 -55 to +150 UNIT V V V A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R JA R JA VALUE 83 60 UNIT C/W C/W Junction to ambient (b) NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 2 - DECEMBER 2004 SEMICONDUCTORS 2 ZX5T951Z CHARACTERISTICS ISSUE 2 - DECEMBER 2004 3 SEMICONDUCTORS ZX5T951Z ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage SYMBOL BV CBO BV CER BV CEO BV EBO I CBO I CER R I EBO V CE(SAT) 1k 1 -14 -50 -75 -160 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) H FE 100 100 45 10 Transition frequency Output capacitance Switching times fT C OBO t ON t OFF -950 -840 250 200 90 25 120 48 39 370 300 MIN. -100 -100 -60 -7 TYP. -120 -120 -80 -8.1 1 1 -20 -0.5 -20 -0.5 -10 -20 -65 -110 -215 -1050 -950 MAX. UNIT CONDITIONS V V V V nA A nA A nA mV mV mV mV mV mV I C =-100 A I C =-1 A, RB 1k I C =-10mA* I E =-100 A V CB =-80V VCB=-80V,Tamb=100 C V CB =-80V VCB=-80V,Tamb=100 C V EB =-6V I C =-0.1A, I B =-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-5A, IB=-500mA* I C =-5A, I B =-500mA* I C =-5A, V CE =-1V* I C =-10mA, V CE =-1V* IC=-2A, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* MHz IC =-100mA, VCE =-10V f=50MHz pF ns V CB =-10V, f=1MHz* I C =-1A, V CC =-10V, I B1 =I B2 =-100mA * Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. ISSUE 2 - DECEMBER 2004 SEMICONDUCTORS 4 ZX5T951Z TYPICAL CHARACTERISTICS ISSUE 2 - DECEMBER 2004 5 SEMICONDUCTORS ZX5T951Z PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min A b b1 b2 c D 1.40 0.38 1.50 0.28 4.40 Max 1.60 0.48 0.53 1.80 0.44 4.60 Min 0.550 0.015 0.060 0.011 0.173 Max 0.630 0.019 0.021 0.071 0.017 0.181 e E E1 G H Inches DIM Min 1.40 3.75 2.90 2.60 Max 1.50 4.25 2.60 3.00 2.85 Min 0.055 0.150 0.114 0.102 Max 0.059 0.167 0.102 0.118 0.112 Millimeters Inches (c) Zetex Semiconductors plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - DECEMBER 2004 SEMICONDUCTORS 6 |
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